Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR POWER TRANSISTOR
BU508AT
TO-220
Plastic Package
High Voltage, High-Speed Switching Transistor
Intended for use in Horizontal Deflection Circuits of Colour Televisions
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Emitter Voltage
Collector Current (DC)
Collector Current (Peak)
Base Current (DC)
Base Current (Peak)
Reverse Base Current (DC or average
over any 20 ms period)
Reverse Base Current (Peak Value)
Power Dissipation upto T
c
=25ºC
Operating and Storage Junction
Temperature Range
*Turn off Current
SYMBOL
V
CES
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
*-I
BM
P
tot
T
j,
T
stg
VALUE
1500
700
8
15
4
6
100
5
60
- 65 to +150
UNIT
V
V
A
A
A
A
mA
A
W
ºC
ELECTRICAL CHARACTERISTICS (T
c
=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
**I
CES
V
CE
=V
CES
max, V
BE
=0
Collector Cut off Current
T
j
=125ºC
V
CE
=V
CES
max, V
BE
=0
V
EB
=6V, I
C
=0
I
C
=100mA, I
B
=0, L=25mH
I
C
=4.5A, V
CE
=5V
I
C
=4.5A, I
B
=2A
I
C
=4.5A, I
B
=2A
I
C
=0.1A, V
CE
=5V, f=5MHz
I
E
=ie=0, V
CB
=10V, f=1MHz
MIN
TYP
MAX
1.0
UNIT
mA
Emitter Cut off Current
Collector Emitter Sustaining Voltage
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Transition Frequency
Collector Capacitance
I
EBO
*V
CEO(sus)
*h
FE
*V
CE(sat)
*V
BE(sat)
f
T
C
C
2.0
10
700
2.25
1.0
1.3
7
125
mA
mA
V
V
V
MHz
pF
**Measured with half-sinewave Voltage (curve tracer)
*Pulse Test: Pulse Width=5ms, Duty Cycle<10%
Continental Device India Limited
Data Sheet
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