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BUF508F 参数 Datasheet PDF下载

BUF508F图片预览
型号: BUF508F
PDF下载: 下载PDF文件 查看货源
内容描述: NPN功率晶体管 [NPN POWER TRANSISTORS]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 43 K
品牌: CDIL [ Continental Device India Limited ]
 浏览型号BUF508F的Datasheet PDF文件第2页浏览型号BUF508F的Datasheet PDF文件第3页  
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
IS/ISO 9002
Lic# QSC/L- 000019.2
NPN POWER TRANSISTORS
BU508F, BU508AF,
BU508DF
TO- 3P Fully Isolated
Plastic Package
B
C
E
Fast Switching, High Voltage Devices for use in Horizontal Deflection Circuits of Colour TV
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Emitter Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Peak Current
Total Power Dissipation upto T
a
=25º C
T
c
=25º C
Storage Temperature Range
Max Operating Junction Temperature
THERMAL RESISTANCE
Thermal Resistance Junction - Case
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
VALUE
1500
700
5
8
15
34
60
- 65 to +150
150
UNIT
V
V
V
A
W
ºC
ºC
R
th (j-c)
2.08
ºC/W
ELECTRICAL CHARACTERISTICS (T
C
=25ºC unless specified otherwise)
.
TEST CONDITIONS
DESCRIPTION
SYMBOL
I
CES
V
CE
=V
CES
, V
BE
=0
Collector Cut off Current
V
CEO (sus)
*
I
B
=0, I
C
=100mA
Collector Emitter Sustaining Voltage
V
EBO
I
E
=10mA, I
C
=0
Emitter Base Voltage
Emitter Cut-off Current
DC Current Gain
Diode forward Voltage
Collector Emitter Saturation Voltage
I
EBO
h
FE
V
F
V
CE(sat) *
BU508F, AF
V
EB
=5V, I
C
=0
BU508DF
I
C
=4.5A, V
CE
=5V
I
F
=4.0A
BU508DF
I
C
=4.5A, I
B
=2.0A
BU508AF, DF
I
C
=4.5A, I
B
=2.0A
BU508F
I
C
=4.5A, I
B
=2.0A
MIN
700
5.0
TYP
MAX
1.0
UNIT
mA
V
V
mA
300
2.25
2.0
1.0
5.0
1.5
V
V
V
V
Base Emitter Saturation Voltage
SWITCHING TIME
Storage Time
Fall Time
V
BE(sat) *
t
s
t
f
I
C
=4.5A,h
FE
=2.5,V
CC
=140V
L
C
=0.9mH, L
B
=3µH
7.0
0.5
µs
µs
* Pulse test: Pulse Duration <300µs , Duty cycle < 1.5%.
µ
Continental Device India Limited
Data Sheet
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