BZM55C Series
Characteristics(T
A
=25˚C unless otherwise specified)
P
tot
– Total Power Dissipation ( mW )
600
500
400
300
200
100
0
V
Ztn
– Relative Voltage Change
1.3
1.2
1.1
1.0
0.9
0.8
–60
V
Ztn
=V
Zt
/V
Z
(25°C)
TK
VZ
=10
WEITRON
10
–4
/K
8
6
4
2
10
–4
/K
10
–4
/K
10
–4
/K
10
–4
/K
0
–2 10
–4
/K
–4
10
–4
/K
0
40
80
120
160
200
0
60
120
180
240
T
amb
– Ambient Temperature (
°C
)
T
j
– Junction Temperature (
°C
)
Fig.1 Total Power Dissipation vs.
Ambient Temperature
1000
V – Voltage Change ( mV )
Z
Fig.2 Typical Change of Working Voltage vs.
Junction Temperature
TK
VZ
– Temperature Coefficient of V
Z
( 10
–4
/K )
15
T
j
= 25°C
100
10
5
I
Z
=5mA
0
I
Z
=5mA
10
1
–5
0
5
10
15
20
25
0
10
20
30
40
50
V
Z
– Z-Voltage ( V )
V
Z
– Z-Voltage ( V )
Fig.3 Typical Change of Working Voltage
under Operating Conditions at T
amb
=25 C
Fig.4 Temperature Coefficient of Vz vs. Z–Voltage
200
C
D
– Diode Capacitance ( pF )
150
V
R
= 2V
100
T
j
= 25°C
50
0
0
5
10
15
20
25
V
Z
– Z-Voltage ( V )
Fig.5 Diode Capacitance vs. Z–Voltage
WEITRON
http://www.weitron.com.tw
4/5
15-Aug-05
CDIL [ Continental Device India Limited ]
