Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON EPITAXIAL POWER TRANSISTORS
C44C8, C44C11
TO - 220
Plastic Package
Medium Power Switching and Amplifier Applications
Complementary C45C Series
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector- Emitter Voltage
Collector- Emitter Voltage
Emitter- Base Voltage
Collector Current Continuous
Peak *
Base Current Continuous
Power Dissipation T
A
=25ºC
T
C
=25ºC
Operating & Storage Junction
Temperature Range
Thermal Resistance
Junction to Ambient
Junction to Case
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
T
j, Tstg
C44C8
70
60
5
4
6
2
1.67
30
-55 to +150
C44C11
90
80
UNIT
V
V
V
A
A
W
ºC
R
th
(j-a)
R
th
(j-c)
75
4.2
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (Tc=25º C unless specified otherwise)
DESCRIPTION
Collector- Emitter Sustaing Voltage
SYMBOL TEST CONDITION
V
CEO(sus)*
I
C
=100mA, I
B
=0
C44C8
C44C11
I
CES
V
CE
=Rated V
CES
I
EBO
V
EB
=5V, I
C
=0
h
FE
*
I
C
=0.2A, V
CE
=1V
I
C
=2A, V
CE
=1V
V
CE(sat) *
I
C
=1A, I
B
=50mA
V
BE(sat) *
I
C
=1A, I
B
=100mA
MIN
TYP
MAX
UNIT
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Dynamic Characteristics
Collector Capacitance
Current Gain Bandwidth Product
Switching Characteristics
DESCRIPTION
60
80
-
-
100
20
-
-
-
-
-
-
-
-
-
-
-
-
10
100
220
-
0.5
1.3
V
V
µA
µA
V
V
C
cbo
f
T
V
CB
=10V, I
E
=0
f=1MHz
V
CE
=4V, I
C
=20mA
-
-
-
50
100
-
pF
MHz
SYMBOL TEST CONDITION
MIN
-
-
TYP
100
500
75
MAX
-
-
-
UNIT
ns
ns
ns
t
d
+ t
r
I
C
=1A, I
B1
=1
B2
=0.1A
Delay Time + Rise Time
t
s
V
CC
=30V, tp=25µs
Storage Time
t
f
Fall Time
* Pulse Test Pulse Width =300ms, Duty Cycle<2%
Continental Device India Limited
Data Sheet
Page 1 of 3
CDIL [ Continental Device India Limited ]
