Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON POWER TRANSISTOR
CD81
TO126
Plastic Package
EC
B
For High Current Driver Applications
ABSOLUTE MAXIMUM RATINGS (T
a
=25ºC )
DESCRIPTION
SYMBOL
V
CBO
Collector Base Voltage
V
CEO
Collector Emitter Voltage
V
EBO
Emitter Base Voltage
I
C
Collector Current
Collector Current (Pulse)
Collector Power Dissipation
Junction Temperature
Storage Temperature
I
CP
P
D
T
j
T
stg
VALUE
30
10
6.0
3.0
5.0
1.0
150
- 55 to +150
UNITS
V
V
V
A
A
W
ºC
ºC
ELECTRICAL CHARACTERISTICS (T
a
=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
V
CEO
I
C
=1mA, I
B
=0
Collector Emitter Voltage
V
CBO
I
C
=10µA, I
E
=0
Collector Base Voltage
Emitter Base Voltage
Collector Cut Off Current
Emitter Cut Off Current
DC Current Gain
DYNAMIC CHARACTERISTICS
Transition Frequency
Output Capacitance
CD81Rev240205E
MIN
10
30
6.0
TYP
MAX
UNITS
V
V
V
V
EBO
I
CBO
I
EBO
h
FE
I
E
=10µA, I
C
=0
V
CB
=20V, I
E
=0
V
EB
=4V, I
C
= 0
I
C
=3A, V
CE
=2V
0.1
0.1
140
µA
µA
f
T
C
ob
V
CE
=10V, I
C
=50mA
V
CB
=10V, I
E
=0, f=1MHz
30
200
MHz
pF
Continental Device India Limited
Data Sheet
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