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CD9012 参数 Datasheet PDF下载

CD9012图片预览
型号: CD9012
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅平面晶体管 [PNP SILICON PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 3 页 / 89 K
品牌: CDIL [ Continental Device India Limited ]
 浏览型号CD9012的Datasheet PDF文件第2页浏览型号CD9012的Datasheet PDF文件第3页  
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
PNP SILICON PLANAR TRANSISTOR
CD9012
TO-92
CBE
General Purpose Audio Amplifier Applications.
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Emitter Voltage
Collector -Base Voltage
Emitter Base Voltage
Collector Current
Collector Power Dissipation
Operating And Storage Junction
Temperature Range
SYMBOL
VCEO
VCBO
VEBO
IC
PC
Tj, Tstg
VALUE
30
40
5.0
500
625
-55 to +150
UNIT
V
V
V
mA
mW
deg C
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
TYP
VCEO
IC=1mA, IB=0
30
-
Collector -Emitter Voltage
VCBO
IC=100uA, IE=0
40
-
Collector -Base Voltage
VEBO
IE=100uA, IC=0
5.0
-
Emitter Base Voltage
ICBO
VCB=25V, IE=0
-
-
Collector Cut off Current
IEBO
VEB=3V, IC=0
-
-
Emitter Cut off Current
hFE
IC=50mA,VCE=1V *
64
-
DC Current Gain
IC=500mA,VCE=1V
40
-
-
Collector Emitter Saturation Voltage
VCE(Sat) IC=150mA,IB=15mA
IC=500mA,IB=50mA
-
-
VBE(Sat) IC=150mA,IB=15mA
-
-
Base Emitter Saturation Voltage
IC=500mA,IB=50mA
-
-
Dynamic Characteristics
Cob
VCB=10V,f=1MHz
-
-
Output Capacitance
ft
VCE=10V, IC=50mA,
200
-
Transition Frequency
f=100MHz
NF
VCE=10V, IC=1mA
-
-
Noise Figure
f=1KHz
hFE CLASSIFICATION *
D/E/F= 64 t G/H/I= 118 to 305:
J 278 to 465
MAX
-
-
-
100
100
465
0.20
0.60
1.0
1.2
10
-
6.0
UNIT
V
V
V
nA
nA
V
V
V
V
pF
MHz
dB
Continental Device India Limited
Data Sheet
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