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CD9014D2 参数 Datasheet PDF下载

CD9014D2图片预览
型号: CD9014D2
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅平面晶体管 [NPN SILICON PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 3 页 / 89 K
品牌: CDIL [ Continental Device India Limited ]
 浏览型号CD9014D2的Datasheet PDF文件第2页浏览型号CD9014D2的Datasheet PDF文件第3页  
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR TRANSISTOR
CD9014
TO-92
CBE
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Emitter Voltage
Collector -Base Voltage
Emitter Base Voltage
Collector Current
Collector Power Dissipation
Operating And Storage Junction
Temperature Range
SYMBOL
VCEO
VCBO
VEBO
IC
PC
Tj, Tstg
VALUE
50
50
5.0
100
625
-55 to +150
UNIT
V
V
V
mA
mW
deg C
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
TYP
VCEO
IC=1mA, IB=0
50
-
Collector -Emitter Voltage
VCBO
IC=100uA, IE=0
50
-
Collector -Base Voltage
VEBO
IE=100uA, IC=0
5.0
-
Emitter Base Voltage
ICBO
VCB=50V, IE=0
-
-
Collector Cut off Current
IEBO
VEB=5V, IC=0
-
-
Emitter Cut off Current
hFE
IC=1mA,VCE=5V
60
-
DC Current Gain
-
-
Collector Emitter Saturation Voltage
VCE(Sat) IC=100mA,IB=5mA
VBE(Sat) IC=100mA,IB=5mA
-
-
Emitter Base Saturation Voltage
Dynamic Characteristics
Cob
VCB=10V,f=1MHz
-
-
Output Capacitance
ft
VCE=5V,IC=10mA,
125
-
Transition Frequency
f=100MHz
NF
VCE=5V, IC=200uA
-
-
Noise Figure
f=1KHz
hFE CLASSIFICATION
A : 60-150, B : 100-300, C : 200-600, D : 400-1000,
D1 : 400-630, D2 : 570-840, D3 : 760-1000, E : >800
MAX
-
-
-
50
50
1000
0.30
1.0
3.50
-
4.0
UNIT
V
V
V
nA
nA
V
V
pF
MHz
dB
Continental Device India Limited
Data Sheet
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