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CD9018D 参数 Datasheet PDF下载

CD9018D图片预览
型号: CD9018D
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅平面外延型晶体管 [NPN SILICON PLANAR EPITAXIAL TRANSISTOR]
分类和应用: 晶体小信号双极晶体管射频小信号双极晶体管局域网
文件页数/大小: 4 页 / 157 K
品牌: CDIL [ Continental Device India Limited ]
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Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CD9018
TO-92
Plastic Package
E
BC
AM/FM Amplifier, Local Oscillator of FM/VHF Tuner
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current
Power Dissipation @ T
a
=25ºC
Junction Temperature
Storage Temperature Range
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
P
D
T
j
T
stg
VALUE
15
30
5
30
400
125
- 55 to +125
UNITS
V
V
V
mA
mW
ºC
ºC
ELECTRICAL CHARACTERISTICS (T
a
=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
V
CEO
I
C
=3mA, I
B
=0
Collector Emitter Voltage
V
CBO
I
C
=10µA, I
E
=0
Collector Base Voltage
V
EBO
I
E
=10µA, I
C
=0
Emitter Base Voltage
Collector Cut Off Current
Emitter Cut Off Current
DC Current Gain
Collector Emitter Saturation Voltage
DYNAMIC CHARACTERISTICS
DESCRIPTION
Output Capacitance
Transition Frequency
Noise Figure
h
FE
Rank Classfication
Rank
D
h
FE
29 - 44
CD9018Rev_3 170403E
MIN
15
30
5
TYP
MAX
UNITS
V
V
V
I
CBO
I
EBO
h
FE
V
CE (sat)
V
CB
=15V, I
E
= 0
V
EB
=3V, I
C
= 0
V
CE
=5V, I
C
=1mA
I
C
=10mA, I
B
=1mA
29
50
100
273
0.5
nA
nA
V
SYMBOL
C
ob
f
T
NF
TEST CONDITION
V
CB
=10V, I
E
=0,f=1MHz
V
CE
=10V, I
C
=5mA,
f=100MHz
V
CE
=10V, I
C
=1mA,
f=60MHz
MIN
TYP
MAX
1.7
UNITS
pF
MHz
600
5.0
dB
E
40 - 59
F
54 - 80
G
72 - 108
H
97- 146
I
132 - 198
J
182 - 273
Continental Device India Limited
Data Sheet
Page 1 of 4