Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON EPITAXIAL POWER TRANSISTOR
CDB1370EF
(9AW)
TO126
MARKING: CDB
1370
EF
Low Freq. Power Amp.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
SYMBOL
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Peak*
Collector Power Dissipation @ Ta=25 deg C
Collector Power Dissipation @ Tc=25 deg C
Junction Temperature
Storage Temperature Range
*Single Pulse Pw=100ms
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
VALUE
60
60
5
2
4
1.5
25
150
-55 to +150
UNIT
V
V
V
A
A
W
W
deg C
deg C
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Cut off Current
Emitter Cut off Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
DC Current Gain
Dynamic Characteristics
Transition Frequency
SYMBOL
VCEO
VCBO
VEBO
ICBO
ICEO
IEBO
VCE(Sat)**
VBE(Sat)**
hFE**
TEST CONDITION
IC=1mA, IB=0
IC=50uA, IE=0
IE=50uA,IC=0
VCB=60V, IE=0
VCE=60V,IB=0
VBE=4V,IC=0
IC=2A,IB=0,.2A
IC=2A, IB=0.2A
IC=0.5A, VCE=5V
MIN
60
60
5
-
-
-
-
-
100
TYP
-
-
-
-
-
-
-
-
-
MAX
-
-
-
10
1
10
1.5
1.5
300
UNIT
V
V
V
uA
uA
uA
V
V
ft
VCE=5V,IC=0.5A,
f=5MHz
VCB=10V, IE=0
f=1MHz
-
15
-
MHz
Collector Output Capacitance
Cob
-
80
-
pF
**Pulse Test
Continental Device India Limited
Data Sheet
Page 1 of 2
CDIL [ Continental Device India Limited ]
