CMBD1201, CMBD1202, CMBD1203
CMBD1204, CMBD1205, CMBD4148
Reverse recovery time when switched from
= 10 mA to I = 10 mA; R = 100 Ω;
I
F
R
L
measured at I = 1 mA
t
<
4 ns
R
rr
RATINGS (per diode) (at T = 25°C unless otherwise specified)
A
Limiting values
Continuous reverse voltage
Repetitive peak reverse voltage
Repetitive peak forward current
Forward current
V
V
I
I
max.
max.
max.
max.
75 V
100 V
500 mA
215 mA
R
RRM
FRM
F
Non-repetitive peak forward current (per crystal)
t = 1 µs
t = 1 ms
t = 1 s
Storage temperature
Junction temperature
I
max.
max.
max.
–55 to +150 ° C
max.
4 A
1.0 A
0.5 A
FSM
I
FSM
I
FSM
Tstg
Tj
150 ° C
THERMAL RESISTANCE
From junction to ambient
R
=
500 K/ W
th j–a
CHARACTERISTICS (per diode)
T
= 25 °C unless otherwise specified
j
Forward voltage
I
F
I
F
I
F
= 10 mA
= 200 mA
= 10 mA
V
V
V
<
<
<
0.855 V
1.05 V
1.0 V
F
F
F
CMBD4148
Reverse currents
V
R
V
R
V
R
= 20 V
= 75 V
= 25 V; T = 150 °C
I
I
I
<
<
<
25 nA
5 µA
30 µA
R
R
R
j
Forward recovery voltage
= 10 mA; t = 20 ns
I
F
V
Q
C
<
<
<
1.75 V
45 pC
2 pF
p
fr
Recovery charge
= 10 mA to V = 5V; R = 100 Ω
I
F
R
s
Diode capacitance
= 0; f = 1 MHz
V
R
d
Reverse recovery time when switched from
= 10 mA to I = 10 mA; R = 100 Ω;
I
F
R
L
measured at I = 1 mA
t
<
4 ns
R
rr
Continental Device India Limited
Data Sheet
Page 2 of 3
CDIL [ Continental Device India Limited ]
