CMBD4150
THERMAL RESISTANCE
From junction to ambient
Rth j–a
500
K/W
CHARACTERISTICS (at T
A
= 25 °C, unless otherwise specified)
Continuous reverse voltage
V
R
Repetitive peak reverse voltage
V
RRM
Forward current (d.c.)
I
F
Repetitive peak forward current
I
FRM
Non–repetitive peak forward current
T = 1
µsec
I
FSM
T = 1 sec
I
FSM
Diode capacitance
C
D
V
R
= 0; f = 1 MHz
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 200 mA
Reverse breakdown voltage
I
R
= 100
mA
Reverse voltage leakage current
V
R
= 50 V
Reverse current
V
R
= 50 V; T
j
= 150 °C
Forward recovery voltage
when switched to I
F
= 10 mA; t
P
= 20 nsec.
Reverse recovery time
I
F
= I
R
= 10 – 200 mAdc, R
L
= 100
Ω
I
F
= I
R
= 200 – 400 mAdc, R
L
= 100
Ω
V
F
V
F
V
F
V
F
V
F
max.
max.
max.
max.
max.
max.
max.
min.
max.
min.
max.
min.
max.
min.
max.
min.
max.
50
75
300
600
4
0.5
2.5
540
620
660
740
760
860
820
920
870
1
V
V
mA
mA
A
A
pF
mV
mV
mV
mV
mV
mV
mV
mV
mV
V
V
BR
I
R
I
R
V
FR
t
rr
t
rr
min
max.
max.
max.
max.
max.
75
100
100
1.75
4
6
V
nA
µA
V
ns
ns
Continental Device India Limited
Data Sheet
Page 2 of 3
CDIL [ Continental Device India Limited ]
