Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
PNP EPITAXIAL PLANAR SILICON TRANSISTOR
PIN CONFIGURATION (PNP)
1 = BASE
2 = EMITTER
3 = COLLECTOR
CMBT200
CMBT200A
SOT23
MARKING : AS BELOW
3
1
2
Designed for General Purpose Amplifier Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise noted)
DESCRIPTION
SYMBOL
VALUE
VCBO
60
Collector -Base Voltage
VCEO
45
Collector -Emitter Voltage
VEBO
6.0
Emitter Base Voltage
IC
500
Collector Current - Continuous
PD
350
Power Dissipation
2.8
Derate Above=25 deg C
Tj, Tstg
-55 to +150
Operating And Storage Junction
Temperature Range
Thermal Resistance
(Rth j-a)
357
Junction to Ambient
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Noted)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
MAX
VCBO
IC=10uA, IE=0
60
-
Collector -Base Voltage
VCEO
IC=1mA, IB=0
45
-
Collector -Emitter Voltage
VEBO
IE=10uA, IC=0
6.0
-
Emitter Base Voltage
ICBO
VCB=50V, IE=0
-
50
Collector Cut off Current
ICES
VCE=4V, IE=0
-
50
IEBO
VEB=4V, IC=0
-
50
Emitter Cut off Current
hFE
IC=100uA,VCE=1V
CMBT200
80
-
DC Current Gain
CMBT200A
240
-
IC=10mA,VCE=1V
CMBT200
CMBT200A
CMBT200A
CMBT200
CMBT200A
100
300
100
100
100
450
600
-
350
-
UNIT
V
V
V
mA
mW
mW/deg C
deg C
deg C/W
UNIT
V
V
V
nA
nA
nA
IC=100mA,VCE=1V*
IC=150mA,VCE=5V*
Continental Device India Limited
Data Sheet
Page 1 of 3
CDIL [ Continental Device India Limited ]
