Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
CMBT2222
CMBT2222A
SILICON PLANAR EPITAXIAL TRANSISTORS
N–P–N silicon transistors
Marking
CMBT2222 = lB
CMBT2222A = lP
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN m
m
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
CMBT2222
CMBT2222A
Collector–base voltage (open ernitter)
V
CB0
Collector–emitter voltage (open base)
V
CE0
Emitter base voltage (open collector)
V
EB0
Collector current (d.c.)
I
C
Total power dissipation up to T
amb
= 25 °C P
tot
D.C. current gain
h
FE
I
C
= 150mA; V
CE
= 10V
h
FE
lC = 500mA; V
CE
= 10V
Transition frequency at f = 100 MHz
f
T
I
C
= 20 mA; V
CE
= 20 V
max.
max.
max.
max.
max.
60
30
5,0
600
250
100 to 300
75
40
6,0
V
V
V
mA
mW
>
>
30
250
40
300
MHz
Continental Device India Limited
Data Sheet
Page 1 of 4