Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON EPITAXIAL TRANSISTOR
PIN CONFIGURATION (NPN)
1 = BASE
2 = EMITTER
3 = COLLECTOR
CMBT2484
SOT23
MARKING: 1U
3
1
2
LOW NOISE TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)
DESCRIPTION
SYMBOL
VCBO
Collector -Base Voltage
VCEO
Collector -Emitter Voltage
VEBO
Emitter Base Voltage
IC
Collector Current -Continuous
PD
Device Dissipation FR-5 Board*
Derate above 25 deg C
Rth (j-a)
Thermal Resistance Junction to Ambient
PD
Device Dissipation Alumina Substrate**
Derate above 25 deg C
Rth (j-a)
Thermal Resistance Junction to Ambient
Junction and Storage Temperature Range
Tj,Tstg
*FR-5=1.0X0.75X0.062 in
**Alumine=0.4x0.3x0.024 in 99.5% alumina.
ELECTRICAL CHARACTERISTICS (TA=25 deg C unless otherwise noted)
CHARACTERISTICS
SYMBOL TEST CONDITION
Collector -Emitter Voltage
Collector -Base Voltage
Emitter Base Voltage
Collector Cut off Current
VCEO
VCBO
VEBO
ICBO
IC=10mA, IB=O
IC=10uA, IE=0
IE=10uA, IC=0
VCB=45V, IE=0
VALUE
60
60
6
50
225
1.8
556
300
2.4
417
-55 to +150
UNIT
V
V
V
mA
mW
mW/deg C
deg C/W
mW
mW/deg C
deg C/W
deg C
MIN
60
60
6.0
-
-
-
250
-
-
-
TYP
-
-
-
-
-
-
-
-
-
-
MAX
-
-
-
10
10
10
-
800
0.35
0.95
UNIT
V
V
V
nA
uA
nA
Emitter Cut off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Noise Figure
VCB=45V, IE=0
TA=150 deg C
IEBO
VEB=5V, IC=0
hFE
IC=1mA, VCE=5V
IC=10mA, VCE=5V
VCE(Sat) IC=1mA,IB=0.1mA
VBE(on) IC=1mA, VCE=5V
V
V
Cobo
Cibo
NF
VCB=5V, IE=0
f=1MHz
VBE=0.5V, IC=0
f=1MHz
IC=10uA, VCE=5V
RS=10 kohms
f=1kHz, BW=200Hz
-
-
-
-
-
-
6.0
9.0
4.0
pF
pF
dB
Continental Device India Limited
Data Sheet
Page 1 of 3
CDIL [ Continental Device India Limited ]
