Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
CMBT2907
CMBT2907A
SILICON PLANAR EPITAXIAL TRANSISTORS
P–N–P silicon transistors
Marking
CMBT2907 = 2B
CMBT2907A = 2F
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN m
m
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
CMBT2907
CMBT2907A
Collector–base voltage (open emitter)
–V
CB0
Collector–emitter voltage (open base)
–V
CE0
Emitter–base voltage (open collector)
–V
EB0
Collector current (d.c.)
–I
C
Total power dissipation up to T
amb
= 25 °CP
tot
Junction temperature
T
j
D.C. current gain
h
FE
–I
C
= 500mA; –V
CE
= 10V
Turn–off switching time
—I
Con
= 150 mA; –I
Bon
= I
Boff
= 15 mA t
off
Transition frequency at f = 100 MHz
f
T
—I
C
= 50 mA; –V
CE
= 20 V
max. 60
max. 40
max.
max.
max.
max.
>
<
>
30
60
60
5,0
600
250
150
50
100
200
V
V
V
mA
mW
°C
ns
MHz
Continental Device India Limited
Data Sheet
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