Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
SOT-23 Formed SMD Package
CMBT3906
SILICON EPITAXIAL TRANSISTOR
P–N–P transistor
Marking
CMBT3906 = 2A
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN m
m
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
Total power dissipation up to T
amb
= 25 °C
D.C. current gain
–I
C
= 10 mA; –V
CE
= 1 V
Transition frequency at f = 100 MHz
–I
C
= 10 mA; –V
CE
= 20 V
–V
CB0
–V
CE0
–V
EB0
–I
C
P
tot
h
FE
f
T
max.
max.
max.
max.
max.
40
40
5
200
250
V
V
V
mA
mW
100 to 300
min.
250
MHz
Continental Device India Limited
Data Sheet
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