Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
CMBT4401
SILICON PLANAR EPITAXIAL TRANSISTOR
N–P–N transistor
Marking
CMBT4401 = 2X
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN m
m
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–emitter voltage
Collector current (DC)
DC current gain
I
C
= 150 mA; V
CE
= 1 V
Total power dissipation up to T
amb
= 25 °C
RATINGS
(at T
A
= 25°C unless otherwise specified)
Limiting values
Collector–emitter voltage
Collector–base voltage
Emitter–base voltage
Collector current (DC)
Total power dissipation up to T
amb
= 25°C
Storage temperature range
Junction temperature
V
CEO
I
C
h
FE
P
tot
max.
max.
min.
max.
max
40 V
600 mA
100
300
250
mW
V
CEO
V
CBO
V
EBO
I
C
P
tot
T
stg
T
j
max.
40 V
max.
60 V
max.
6 V
max.
600 mA
max
250
mW
–55 to +150 ° C
max.
150 ° C
Continental Device India Limited
Data Sheet
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