Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
CMBT5088
CMBT5089
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
N–P–N transistors
Marking
CMBT5088 = 1Q
CMBT5089 = 1R
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN m
m
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
5088
5089
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Collector current
Total power dissipation up to T
amb
= 25 °C
Junction temperature
Collector-emitter saturation voltage
I
C
= 10 mA; I
B
= 1 mA
D.C. current gain
I
C
= 100 µA; V
CE
= 5 V
Transition frequency at f = 20 MHz
I
C
= 500 µA; V
CE
= 5 V
*FR-5 Board = 1.0 × 0.75 × 0.062 in.
V
CB0
V
CE0
I
C
P
tot
*
T
j
V
CEsat
h
FE
max.
max.
max.
max.
max.
max.
35
30
50
225
150
0.5
30 V
25 V
mA
mW
°C
V
400
1200
min. 300
max. 900
min.
50
f
T
MHz
Continental Device India Limited
Data Sheet
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