Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
CMBT5401
SILICON P–N–P HIGH–VOLTAGE TRANSISTOR
P–N–P transistor
Marking
CMBT5401 = 2L
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN m
m
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Collector current
Total power dissipation up to T
amb
= 25°C
Collector–emitter saturation voltage
I
C
= 50 mA; I
B
= 5 mA
D.C. current gain
I
C
= 10 mA; V
CE
= –5 V
RATINGS
(at T
A
= 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current
–V
CBO
–V
CEO
–I
C
P
tot
V
CEsat
h
FE
max.
max.
max.
max
max.
160
150
500
250
V
V
mA
mW
0,5 V
60 to 240
–V
CBO
–V
CEO
–V
EBO
–I
C
max.
max.
max.
max.
160
150
5
500
V
V
V
mA
Continental Device India Limited
Data Sheet
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