Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
PIN CONFIGURATION (NPN)
1 = BASE
2 = EMITTER
3 = COLLECTOR
CMBT847
SOT23
MARKING: AS BELOW
3
1
2
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
VALUE
UNIT
V
V
V
mA
mW
deg C
VCBO
50
Collector -Base Voltage
VCEO
50
Collector -Emitter Voltage
VEBO
6.0
Emitter Base Voltage
IC
200
Collector Current
PC
150
Collector Power Dissipation
Tj, Tstg
-55 to +150
Operating And Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta= 25 deg C unless otherwise specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
TYP
VCEO
IC=100uA, IB=0
50
-
Collector -Emitter Voltage
ICBO
VCB=50V, IE=0
-
-
Collector Cut off Current
IEBO
VEB=6V, IC=0
-
-
Emitter Cut off Current
hFE(1)
IC=1mA,VCE=6V
150
-
DC Current Gain
hFE(2)
IC=0.1mA,VCE=6V
50
-
VCE(Sat) IC=100mA,IB=10mA
-
-
Collector Emitter Saturation Voltage
VBE(Sat) IC=100mA,IB=10mA
-
-
Base Emitter Saturation Voltage
Dynamic Characteristics
ft
VCE=6V,IC=10mA,
-
200
Transition Frequency
Cob
VCB=6V, IE=0
-
2.5
Collector Output Capacitance
f=1MHz
NF
VCE=6V, IE=0.1mA
-
-
Noise Figure
f=1kHz, Rg=2kohms
CLASSIFICATION
E
F
G
hFE(1)
150-300
250-500
400-800
MARKING
NE
NF
NG
MAX
-
100
100
800
-
0.30
1.0
-
-
15
UNIT
V
nA
nA
V
V
MHz
pF
dB
Continental Device India Limited
Data Sheet
Page 1 of 3
CDIL [ Continental Device India Limited ]
