Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTOR
PIN CONFIGURATION (PNP)
1 = BASE
2 = EM ITTER
3 = COLLECTOR
CMBT8550
SOT-23
Formed SMD Package
3
1
2
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Collector Dissipation @ T
a
=25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
, T
stg
VALUE
30
25
6
800
250
- 55 to +125
UNITS
V
V
V
mA
mW
ºC
ELECTRICAL CHARACTERISTICS (T
a
=25ºC unless specified otherwise)
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
SYMBOL
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
TEST CONDITION
I
C
=100µA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=15V, I
E
=0
V
EB
=4V, I
C
=0
I
C
=5mA, V
CE
=1V
*I
C
=100mA, V
CE
=1V
I
C
=500mA, V
CE
=1V
I
C
=500mA, I
B
=50mA
I
C
=500mA, I
B
=50mA
I
C
=100mA, V
CE
=10V, f=100MHz
V
CB
=10V, f=1MHz
C
100 - 200
55C
100
35
E
280 - 400
55E
MIN
30
25
6
TYP
MAX
UNITS
V
V
V
nA
nA
50
500
45
100
40
400
0.5
1.2
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Transition Frequency
Output Capacitance
CLASSIFICATIONS
*h
FE
MARKING
V
CE(sat)
V
BE(sat)
f
T
C
ob
CMBT8550
100 - 400
55
V
V
MHz
pF
D
150 - 300
55D
Continental Device India Limited
Data Sheet
Page 1 of 3
CDIL [ Continental Device India Limited ]
