Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP EPITAXIAL PLANAR SILICON TRANSISTOR
PIN CONFIGURATION (PNP)
1 = BASE
2 = EMITTER
3 = COLLECTOR
CMBT857
SOT23
MARKING: AS BELOW
3
1
2
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
VALUE
UNIT
V
V
V
mA
mW
deg C
deg C
MAX
-
100
100
500
-
0.30
1.0
-
-
20
UNIT
V
nA
nA
VCBO
60
Collector -Base Voltage
VCEO
50
Collector -Emitter Voltage
VEBO
6.0
Emitter Base Voltage
IC
200
Collector Current
PC
200
Collector Power Dissipation
Tj
125
Junction Temperature
Tstg
-55 to +125
Storage Temperature
ELECTRICAL CHARACTERISTICS (Ta=25 deg C unless otherwise specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
TYP
VCEO
IC=100uA, IB=0
50
-
Collector -Emitter Voltage
ICBO
VCB=60V, IE=0
-
-
Collector Cut off Current
IEBO
VEB=6V, IC=0
-
-
Emitter Cut off Current
hFE(1)
IC=1mA,VCE=6V
150
-
DC Current Gain
hFE(2)
IC=0.1mA,VCE=6V
90
-
VCE(Sat) IC=100mA,IB=10mA
-
-
Collector Emitter Saturation Voltage
VBE(Sat) IC=100mA,IB=10mA
-
-
Base Emitter Saturation Voltage
Dynamic Characteristics
ft
VCE=6V,IC=10mA,
-
200
Transition Frequency
Cob
VCB=6V, IE=0
-
4.0
Collector Output Capacitance
f=1MHz
NF
VCE=6V, IE=0.3mA
-
-
Noise Figure
f=100Hz, Rg=10kohms
CLASSIFICATION
E
F
hFE(1)
150-300
250-500
MARKING
PE
PF
V
V
MHz
pF
dB
Continental Device India Limited
Data Sheet
Page 1 of 3
CDIL [ Continental Device India Limited ]
