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CMBT9012I 参数 Datasheet PDF下载

CMBT9012I图片预览
型号: CMBT9012I
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅平面晶体管 [PNP SILICON PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 3 页 / 174 K
品牌: CDIL [ Continental Device India Limited ]
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Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
PNP SILICON PLANAR TRANSISTOR
PIN CONFIGURATION (PNP)
1 = BASE
2 = EMITTER
3 = COLLECTOR
CMBT 9012
SOT-23
MARKING: AS BELOW
3
1
2
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Collector Dissipation
Operating And Storage Junction
Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
PC
Tj, Tstg
VALUE
35
30
5.0
500
250
-55 to +150
UNIT
V
V
V
mA
mW
deg C
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
VCBO
IC=100uA, IE=0
Collector -Base Voltage
VCEO
IC=1mA, IB=0
Collector -Emitter Voltage
VEBO
IE=100uA, IC=0
Emitter Base Voltage
ICBO
VCB=25V, IE=0
Collector Cut off Current
IEBO
VEB=3V, IC=0
Emitter Cut off Current
hFE
IC=50mA,VCE=1V *
DC Current Gain
IC=300mA,VCE=1V
VCE(Sat) IC=150mA,IB=15mA
Collector Emitter Saturation Voltage
IC=300mA,IB=30mA
VBE(Sat) IC=150mA,IB=15mA
Base Emitter Saturation Voltage
IC=300mA,IB=30mA
Dynamic Characteristics
ft
VCE=10V,IC=50mA,
Transition Frequency
f=100MHz
CLASSIFICATION
hFE*
MARKING
G/H/I
118-305
2GI
MIN
35
30
5.0
-
-
118
40
-
-
-
-
140
TYP
-
-
-
-
-
-
-
-
-
-
-
-
MAX
-
-
-
100
500
305
-
0.20
0.60
1.0
1.20
-
UNIT
V
V
V
nA
nA
V
V
V
V
MHz
Continental Device India Limited
Data Sheet
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