欢迎访问ic37.com |
会员登录 免费注册
发布采购

CMBT9014C 参数 Datasheet PDF下载

CMBT9014C图片预览
型号: CMBT9014C
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅平面晶体管 [NPN SILICON PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 3 页 / 173 K
品牌: CDIL [ Continental Device India Limited ]
 浏览型号CMBT9014C的Datasheet PDF文件第2页浏览型号CMBT9014C的Datasheet PDF文件第3页  
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR TRANSISTOR
PIN CONFIGURATION (NPN)
1 = BASE
2 = EMITTER
3 = COLLECTOR
CMBT9014
SOT-23
MARKING: AS BELOW
3
1
2
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Dissipation
Operating And Storage Junction
Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
PC
Tj, Tstg
VALUE
30
30
5.0
100
250
-55 to +150
UNIT
V
V
V
mA
mW
deg C
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
VCBO
IC=100uA, IE=0
30
Collector -Base Voltage
VCEO
IC=1mA, IB=0
30
Collector -Emitter Voltage
VEBO
IE=100uA, IC=0
5.0
Emitter Base Voltage
ICBO
VCB=30V, IE=0
-
Collector Cut off Current
IEBO
VEB=5V, IC=0
-
Emitter Cut off Current
hFE
IC=1mA, VCE=5V
150
DC Current Gain
VCE(Sat) IC=100mA,IB=5mA
-
Collector Emitter Saturation Voltage
VBE(Sat) IC=100mA,IB=5mA
-
Base Emitter Saturation Voltage
Dynamic Characteristics
Transition Frequency
Output Capacitance
Noise Figure
CLASSIFICATION
hFE
MARKING
TYP
-
-
-
-
-
-
-
-
MAX
-
-
-
15
500
1000
0.60
1.2
UNIT
V
V
V
nA
nA
V
V
ft
Cob
NF
VCE=5V,IC=10mA,
f=100MHz
VCB=10V,f=1MHz
125
-
-
C
200-600
14C
-
-
-
-
3.5
4.0
D
400-1000
14D
MHz
pF
dB
VCE=5V, IC=200uA
f=1kHz
CMBT9014
B
150-1000
100-300
14
14B
Continental Device India Limited
Data Sheet
Page 1 of 3