Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
PIN CONFIGURATION (NPN)
1 = BASE
2 = EM ITTER
3 = COLLECTOR
CMBTA44
SOT-23
Formed SMD Package
3
1
2
Marking Code is =3Z
Designed for Extremely High Voltage Applications
ABSOLUTE MAXIMUM RATINGS (T
a
=25ºC)
DESCRIPTION
SYMBOL
V
CBO
Collector Base Voltage
V
CEO
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Power Dissipation
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Ambient in free air
V
EBO
I
C
P
D
T
j,
T
stg
VALUE
450
400
6
300
350
- 65 to+150
UNITS
V
V
V
mA
mW
ºC
R
th(j-a)
357
ºC/W
Electrical Characterstics (T
a
=25ºC unless specified otherwise)
DESCRIPTION
Collector Cut Off Current
Collector Cut Off Current
Emitter Cut Off Current
Collector Base Voltage
Collector Emitter Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Emitter Saturation
Voltage
SYMBOL
I
CBO
I
CES
I
EBO
V
CBO
V
CES
V
CEO
V
EBO
CONDITIONS
V
CB
=400V, I
E
=0
V
CE
=400V, V
BE
=0
V
EB
=4V, I
C
=0
I
C
=100µA, I
E
=0
I
C
=100µA, V
BE
=0
I
C
=1mA, I
B
=0
I
E
=10µA, I
C
=0
I
C
=1mA, I
B
=0.1mA
V
CE(sat)
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=50mA
V
CE
=10V, I
C
=100mA
V
CE
=10V, I
C
=10mA, f=10MHz
V
CB
=20V, I
E
=0, f=1MHz
V
EB
=0.5V, Ic=0, f=1MHz
Data Sheet
MIN
TYP
MAX
100
500
100
UNIT
nA
nA
nA
V
V
V
V
450
450
400
6
0.40
0.50
0.75
0.75
40
50
45
20
20
V
V
V
V
Base Emitter Saturation Voltage
DC Current Gain
V
BE(sat)
h
FE
200
Transition Frequency
Output Capacitance
Input Capacitance
Continental Device India Limited
f
T
C
ob
C
ib
7.0
130
MHz
pF
pF
Page 1 of 3
CDIL [ Continental Device India Limited ]
