Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
CMBTA55
CMBTA56
SILICON EPITAXIAL TRANSISTORS
P–N–P transistor
Marking
CMBTA55 = 2H
CMBTA56 = 2G
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN m
m
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
Total power dissipation up to T
amb
= 25 °C
D.C. current gain
–I
C
= 100 mA; –V
CE
= 1 V
Transition frequency at f = 100 MHz
–I
C
= 100 mA; –V
CE
= 1 V
Collector–emitter saturation voltage
–I
C
= 100 mA; I
B
= 10 mA
–V
CBO
–V
CEO
–V
EBO
–I
C
P
tot
h
FE
f
T
V
CEsat
CMBT A55
max. 60
max. 60
max.
max.
A56
80 V
80 V
V
mA
mW
4
500
250
100
50
0.25
min.
min.
max.
MHz
V
Continental Device India Limited
Data Sheet
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