Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
CMBTA92
CMBTA93
SILICON EPITAXIAL TRANSISTORS
P–N–P transistor
Marking
CMBTA92 = 2D
CMBTA93 = 2E
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN m
m
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
Total power dissipation up to T
amb
= 25 °C
D.C. current gain
–I
C
= 10 mA; –V
CE
= 10 V
Transition frequency at f = 100 MHz
–I
C
= 10 mA; –V
CE
= 20 V
Collector–base capacitance at f = 1 MHz
I
E
= 0; –V
CB
= 20 V
CMBT A92
–V
CBO
max. 300
–V
CEO
max. 300
–V
EBO
max.
max.
–I
C
P
tot
h
FE
f
T
C
cb
min.
min.
max.
6
A93
200 V
200 V
V
mA
mW
5
500
250
40
50
MHz
8
pF
Continental Device India Limited
Data Sheet
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