Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
PIN CONFIGURATION (NPN)
1 = BASE
2 = EM ITTER
3 = COLLECTOR
CMMT493
SOT-23
Formed SMD Package
3
1
2
Marking Code is =493
Medium Power Transistor
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Collector Current Peak
Base Current
Power Dissipation @ T
a
=25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
T
j,
T
stg
VALUE
120
100
5
1
2
200
500
- 55 to +150
UNITS
V
V
V
A
A
mA
mW
ºC
Electrical Characterstics (T
a
=25ºC unless specified otherwise)
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Cut Off Current
Collector Cut Off Current
Emitter Cut Off Current
Collector Emitter Saturation
Voltage
Base Emitter Saturation Voltage
Base Emitter On Voltage
DC Current Gain
SYMBOL
V
CBO
*V
CEO(sus)
V
EBO
I
CBO
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
*h
FE
CONDITIONS
I
C
=100µA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=100µA, I
C
=0
V
CB
=100V, I
E
=0
V
CE
=100V, V
BE
=0
V
EB
=4V, I
C
=0
I
C
=500mA, I
B
=50mA
I
C
=1A, I
B
=100mA
I
C
=1A, I
B
=100mA
V
CE
=10V, I
C
=1A
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=250mA
V
CE
=10V, I
C
=500mA
V
CE
=10V, I
C
=1A
V
CE
=10V, I
C
=50mA, f=100MHz
V
CB
=10V, f=1MHz
100
100
60
20
150
MIN
120
100
5
100
100
100
0.30
0.60
1.15
1.00
300
TYP
MAX
UNIT
V
V
V
nA
nA
nA
V
V
V
V
Transition Frequency
Output Capacitance
f
T
C
obo
10
MHz
pF
*Pulse Test: Pulse Width =300
µ
s, Duty Cycle <2%
Continental Device India Limited
Data Sheet
Page 1 of 3
CDIL [ Continental Device India Limited ]
