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CMMT591A 参数 Datasheet PDF下载

CMMT591A图片预览
型号: CMMT591A
PDF下载: 下载PDF文件 查看货源
内容描述: PNP外延平面硅晶体管 [PNP EPITAXIAL PLANAR SILICON TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 3 页 / 196 K
品牌: CDIL [ Continental Device India Limited ]
 浏览型号CMMT591A的Datasheet PDF文件第2页浏览型号CMMT591A的Datasheet PDF文件第3页  
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP EPITAXIAL PLANAR SILICON TRANSISTOR
PIN CONFIGURATION (PNP)
1 = BASE
2 = EMITTER
3 = COLLECTOR
CMMT591A
SOT-23
MARKING: 59A
3
1
2
Complementary CMMT491A
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
VCBO
Collector -Base Voltage
VCEO
Collector -Emitter Voltage
VEBO
Emitter Base Voltage
ICM
Peak Pulse Current
IC
Collector Current Continuous
IB
Base Current
Ptot
Power Dissipation @Tamb=25 deg C
Tj, Tstg
Operating & Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C )
DESCRIPTION
SYMBOL
VCBO
Collector -Base Voltage
VCEO
Collector -Emitter Voltage
VEBO
Emitter Base Voltage
ICBO
Collector Cut off Current
IEBO
Emitter Cut off Current
ICES
Collector-Emitter Cut off Current
VCE(Sat)*
Collector Emitter Saturation Voltage
VALUE
40
40
5.0
2.0
1.0
200
500
-55 to +150
MIN
40
40
5.0
-
-
-
-
-
-
-
-
300
300
250
160
30
150
MAX
-
-
-
100
100
100
0.20
0.35
0.50
1.1
1.0
-
800
-
-
-
-
UNIT
V
V
V
A
A
mA
mW
deg C
UNIT
V
V
V
nA
nA
nA
V
V
V
V
V
Base Emitter Saturation Voltage
Base Emitter on Voltage
DC Current Gain
TEST CONDITION
IC=100uA, IE=0
IC=10mA, IB=0
IE=100uA, IC=0
VCB=30V, IE=0
VEB=4V, IC=0
VCE=30V, VBE=0
IC=100mA,IB=1mA
IC=500mA,IB=20mA
IC=1A, IB=100mA
VBE(Sat)* IC=1A, IB=50mA
VBE(on)* IC=1A, VCE=5V
hFE
IC=1mA,VCE=5V
IC=100mA,VCE=5V*
IC=500mA,VCE=5V*
IC=1A, VCE=5V*
IC=2A, VCE=5V*
ft
VCE=10V,IC=50mA,
f=100MHz
VCB=10V, IE=0
f=1MHz
Dynamic Characteristics
Transition Frequency
MHz
Output Capacitance
Cobo
-
10
pF
*Pulsed Conditions pulse width=300us, Duty Cycle=2%
Continental Device India Limited
Data Sheet
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