Continental Device India Limited
An ISO/TS 16949 and ISO 9001 Certified Manufacturer
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CN450 / CN451
TO-92
Plastic Package
E
BC
General Purpose Transistors designed for Small and Medium Signal Amplification
from D.C to Radio Frequencies
Complementary CP550 and CP551
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Peak Pulse Current
Collector Current Continuous
Base Current
Power Dissipation @ T
a
=25ºC
Power Dissipation @ T
a
=25ºC
Power Dissipation @ T
c
=25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
D
*P
D
P
D
T
j
, T
stg
CN450
60
45
5.0
2.0
1.0
200
0.8
1.0
2.0
- 65 to +150
CN451
80
60
UNITS
V
V
V
A
A
mA
W
W
W
ºC
*Transistors mounted on printed circuit board. Lead Length 4 mm, mounting pad for collector lead min.
10 mm x 10 mm, copper
ELECTRICAL CHARACTERISTICS (T
a
=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
I
CBO
V
CB
=45V, I
E
=0
Collector Cut Off Current
V
CB
=60V, I
E
=0
Emitter Cut Off Current
Base Emitter Saturation Voltage
Collector Emitter Saturation Voltage
Collector Emitter Voltage
DC Current Gain
DYNAMIC CHARACTERISTICS
DESCRIPTION
Transition Frequency
Output Capacitance
CN450_451Rev_2 211204E
CN450
<100
<100
<0.25
<1.1
>45
100 - 300
>15
CN451
<100
<100
<0.35
<1.1
>60
50 - 150
>10
UNITS
nA
nA
nA
V
V
V
I
EBO
**V
CE (sat)
**V
BE (sat)
V
CEO
**h
FE
V
EB
=4V, I
C
=0
I
C
=150mA, I
B
=15mA
I
C
=150mA, I
B
=15mA
I
C
=1mA, I
B
=0
V
CE
=10V, I
C
=150mA
V
CE
=10V, I
C
=1A
TEST CONDITION
V
CE
=10V, I
C
=50mA,
f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
SYMBOL
f
T
C
obo
CN451
>150
<15
CN452
>150
<15
UNITS
MHz
pF
**Pulse Condition: Pulse Width = 300µs, Duty Cycle < 2%.
µ
Continental Device India Limited
Data Sheet
Page 1 of 4
CDIL [ Continental Device India Limited ]
