Continental Device India Limited
An ISO/TS 16949 and ISO 9001 Certified Manufacturer
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CN452 / CN453
TO-92
Plastic Package
E
BC
General Purpose Transistors designed for Small and Medium Signal Amplification
from D.C to Radio Frequencies
Complementary CP552 and CP553
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Peak Pulse Current
Collector Current Continuous
Base Current
Power Dissipation @ T
a
=25ºC
Power Dissipation @ T
a
=25ºC
Power Dissipation @ T
c
=25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
D
*P
D
P
D
T
j
, T
stg
CN452
100
80
5.0
2.0
1.0
200
0.8
1.0
2.0
- 65 to +150
CN453
120
100
UNITS
V
V
V
A
A
mA
W
W
W
ºC
*Transistors mounted on printed circuit board. Lead Length 4mm, mounting pad for collector lead min
10mm x 10 mm, copper
ELECTRICAL CHARACTERISTICS (T
a
=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
I
CBO
V
CB
=80V, I
E
= 0
Collector Cut Off Current
V
CB
=100V, I
E
= 0
Emitter Cut Off Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Collector Emitter Voltage
DC Current Gain
DYNAMIC CHARACTERISTICS
DESCRIPTION
Transition Frequency
Output Capacitance
CN452_453Rev_2 211204E
CN452
<100
<100
<0.7
<1.3
>80
40 - 150
>10
CN453
<100
<100
<0.7
<1.3
>100
40 - 200
>10
I
EBO
V
CE (sat)
V
BE (sat)
V
CEO
*h
FE
V
EB
=4V, I
C
= 0
I
C
=150mA, I
B
=15mA
I
C
=150mA, I
B
=15mA
I
C
=1mA, I
B
=0
V
CE
=10V, I
C
=150mA
V
CE
=10V, I
C
=1A
TEST CONDITION
V
CE
=10V, I
C
=50mA,
f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
UNITS
nA
nA
nA
V
V
V
SYMBOL
f
T
C
obo
CN452
>100
<15
CN453
>100
<15
UNITS
MHz
pF
*Pulse Condition: Pulse Width = 300µs, Duty Cycle < 2%.
µ
Continental Device India Limited
Data Sheet
Page 1 of 4
CDIL [ Continental Device India Limited ]
