Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR SWITCHING TRANSISTOR
PIN CONFIGURATION (PNP)
1 = BASE
2 = EMITTER
3 = COLLECTOR
CPBT720
SOT-23
MARKING: C20
3
1
2
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
VALUE
VCBO
35
Collector -Base Voltage
VCEO
40
Collector -Emitter Voltage
VEBO
5.0
Emitter Base Voltage
ICM
4.0
Peak Pulse Current **
IC
1.50
Continuous Collector Current
IB
500
Base Current
Ptot
350
Power Dissipation @ Tamb=25 deg C *
Tj, Tstg
-55 to +150
Operating And Storage Junction
Temperature Range
*Maximum Power Dissipation is Calculated Assuming That The Device is Mounted on A Ceramic
Substrate Measuring 15x15x0.6mm
** Measured Under Pulsed Conditions. Pulse Width =300us, Duty Cycle=2%
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
TYP
MAX
VCBO
IC=100uA, IE=0
40
-
Collector -Base Voltage
VCEO*
IC=10mA, IB=0
35
-
Collector -Emitter Voltage
VEBO
IE=100uA, IC=0
5.0
-
Emitter Base Voltage
ICBO
VCB=35V, IE=0
-
-
100
Collector Cut off Current
ICES
VCE=35V, VEB=0
-
-
100
IEBO
VEB=4V, IC=0
-
-
100
Emitter Cut off Current
VCE(Sat)* IC=0.1A, IB=10mA
-
-
50
Collector Emitter Saturation Voltage
IC=1A, IB=50mA
-
-
350
IC=1.5A, IB=100mA
-
-
500
VBE(Sat)* IC=1.5A, IB=75mA
-
1.5
Base Emitter Saturation Voltage
VBE(on)* IC=1.5A,VCE=2V
-
-
1.0
Base Emitter (on) Voltage
hFE*
IC=10mA,VCE=2V
300
-
-
DC Current Gain
IC=0.1A,VCE=2V
300
-
-
IC=1A,VCE=2V
180
-
-
IC=1.5A,VCE=2V
60
-
-
IC=3A,VCE=2V
12
-
-
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
Dynamic Characteristics
Transition Frequency
CPBT720
TYP
MAX
UNIT
V
V
V
A
A
mA
mW
deg C
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
V
V
MIN
UNIT
VCE=10V,IC=50mA,
f=100MHz
Cobo
VCB=10V, f=1MHz
Output Capacitance
** Measured Under Pulsed Conditions. Pulse Width =300us, Duty Cycle=2%
ft
150
-
-
-
-
25
MHz
pF
Continental Device India Limited
Data Sheet
Page 1 of 3
CDIL [ Continental Device India Limited ]
