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CSA1015GR 参数 Datasheet PDF下载

CSA1015GR图片预览
型号: CSA1015GR
PDF下载: 下载PDF文件 查看货源
内容描述: PNP外延平面硅晶体管 [PNP EPITAXIAL PLANAR SILICON TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 4 页 / 88 K
品牌: CDIL [ Continental Device India Limited ]
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Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
PNP EPITAXIAL PLANAR SILICON TRANSISTOR
CSA1015
TO-92
Plastic Package
E
CB
Audio Frequency General Purpose and Driver Stage Amplifier Applications.
Complementary CSC1815
ABSOLUTE MAXIMUM RATINGS (T
a
=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
V
CBO
Collector Base Voltage
V
CEO
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Base Current
Collector Power Dissipation
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to case
V
EBO
I
C
I
B
P
C
T
j
, T
stg
VALUE
50
50
5
150
50
625
-55 to +125
UNITS
V
V
V
mA
mA
mW
ºC
R
th(j-c)
250
ºC/W
ELECTRICAL CHARACTERISTICS (T
a
=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
I
CBO
V
CB
=50V, I
E
=0
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
DYNAMIC CHARACTERISTICS
Transition Frequency
Collector Output Capacitance
Base Spreading Resistance
Noise Figure
CLASSIFICATION
*h
FE
CSA1015REV_5 281202D
MIN
TYP
MAX
100
100
400
0.30
1.1
UNITS
nA
nA
I
EBO
*h
FE
h
FE
V
CE(sat)
V
BE(sat)
V
EB
=5V, I
C
= 0
I
C
=2mA, V
CE
=6V
I
C
=150mA, V
CE
=6V
I
C
=100mA,I
B
= 10mA
I
C
=100mA,I
B
= 10mA
70
25
V
V
ft
C
ob
rbb'
NF
O
70 - 140
V
CE
=10V, I
C
=1mA,
f=100MHz
V
CB
=10V,I
E
=0,
f=1MHz
V
CB
=10V, I
E
=1mA,
f=30MHz
V
CE
=6V, I
C
=0.1mA,
R
g
=10Kohms, f=1KHz
Y
120 - 240
80
7.0
30
10
GR
200 - 400
MHz
pF
dB
Continental Device India Limited
Datasheet
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