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CSA1585BC 参数 Datasheet PDF下载

CSA1585BC图片预览
型号: CSA1585BC
PDF下载: 下载PDF文件 查看货源
内容描述: NPN外延平面硅晶体管 [NPN EPITAXIAL PLANAR SILICON TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 3 页 / 61 K
品牌: CDIL [ Continental Device India Limited ]
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Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
PNP EPITAXIAL PLANAR SILICON TRANSISTOR
CSA1585BC
(9AW)
TO-92
BCE
Marking : CSA
1585
BC
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION
SYMBOL
VALUE
BVCBO
40
Collector -Base Voltage
BVCEO
20
Collector Emitter Voltage
BVEBO
6.0
Emitter Base Voltage
IC
2.0
Collector Current
ICP*
5.0
Collector Current Peak
PC
0.4
Collector Power Dissipation
Tj, Tstg
-55 to +150
Operating And Storage Junction
Temperature Range
*Single Pulse Pw=10ms
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
VCBO
IC=50uA, IE=0
40
Collector Base Voltage
VCEO
IC=1mA, IB=0
20
Collector Emitter Voltage
VEBO
IE=50uA, IC=0
6.0
Emitter Base Voltage
ICBO
VCB=30V, IE=0
-
Collector Cut off Current
ICEO
VCE=20V, IB=0
IEBO
VEB=5V, IC=0
-
Emitter Cut off Current
hFE
VCE=2V, IC=0.1A
180
DC Current Gain
VCE(Sat) IC=2A, IB=0.1A
-
Collector Emitter Saturation Voltage
Dynamic Characteristics
ft
VCE=2V,IC=0.5A,
-
Transition Frequency
f=100MHz
Cob
VCB=10V, IE=0
-
Collector Output Capacitance
f=1MHz
UNIT
V
V
V
A
A
W
deg C
TYP
-
-
-
-
150
35
MAX
-
-
-
0.1
1.0
0.1
390
1.0
-
-
UNIT
V
V
V
uA
uA
uA
V
MHz
pF
Continental Device India Limited
Data Sheet
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