CSC1061
Total power dissipation up to T
C
= 25°C
Junction temperature
Storage temperature
CHARACTERISTICS
T
amb
= 25°C unless otherwise specified
Collector cutoff current
I
E
= 0; V
CB
= 20V
Breakdown voltages
I
C
= 50 mA; I
B
= 0
I
C
= 5 mA; I
E
= 0
I
E
= 5 mA; I
C
= 0
Saturation voltages
I
C
= 2 A; I
B
= 0.2 A
Base emitter on voltage
I
C
= 1 A; V
CE
= 4 V
D.C. current gain
I
C
= 0.1A; V
CE
= 4V
I
C
= 1A; V
CE
= 4V**
Transition frequency
I
C
= 0.5A; V
CE
= 4V
P
tot
T
j
T
stg
max.
25 W
max.
150 ºC
–65 to +150 ºC
I
CBO
V
CEO
V
CBO
V
EBO
V
CEsat
V
BE(on)
h
FE
h
FE
max.
min.
min.
min.
max.
max.
min.
min.
max.
typ.
100 µA
50 V
50 V
4.0 V
1.0 V
1.5 V
35
35
320
8 MHz
f
T
**h
FE
classification: A: 35-70 B: 60-120 C: 100-200 D: 160-320
Continental Device India Limited
Data Sheet
Page 2 of 3
CDIL [ Continental Device India Limited ]
