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CSC3930B 参数 Datasheet PDF下载

CSC3930B图片预览
型号: CSC3930B
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅平面外延型晶体管 [NPN SILICON PLANAR EPITAXIAL TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 3 页 / 107 K
品牌: CDIL [ Continental Device India Limited ]
 浏览型号CSC3930B的Datasheet PDF文件第2页浏览型号CSC3930B的Datasheet PDF文件第3页  
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
PIN CONFIGURATION (NPN)
1 = BASE
2 = EM ITTER
3 = COLLECTOR
CSC3930
SOT-23
Formed SMD Package
3
1
2
Marking Symbol : V
Complementary CSA1532
Optimum for RF Amplification of FM/AM Radios
ABSOLUTE MAXIMUM RATINGS (T
a
=25ºC)
DESCRIPTION
SYMBOL
V
CBO
Collector Base Voltage
V
CEO
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
V
EBO
I
C
P
C
T
j
T
stg
VALUE
30
20
5
30
150
150
- 55 to +150
UNITS
V
V
V
mA
mW
ºC
ºC
Electrical Characterstics (T
a
=25ºC unless specified otherwise)
DESCRIPTION
Collector Cut Off Current
DC Current Gain
Transition Frequency
Noise Figure
Reverse Transfer Impedance
Common Emitter Reverse-
Transfer Capacitance
*h
FE
Classification
Marking
SYMBOL
I
CBO
*h
FE
f
T
NF
Z
rb
C
re
CONDITIONS
V
CB
= 10V, I
E
= 0
V
CB
= 10V,I
E
= -1mA
V
CB
=10V, I
E
= -1mA, f=200 MHz
V
CB
=10V, I
E
= -1mA, f = 5MHz
V
CB
=10V, I
E
= -1mA, f=2MHz
V
CE
=10V,Ic = 1mA,f=10.7 MHz
70
150
4
50
1.5
MIN
TYP
MAX
0.1
220
MHz
dB
pF
UNIT
µA
B : 70 - 140
VB
C : 110 - 220
VC
Continental Device India Limited
Data Sheet
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