Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
IS/ISO 9002
Lic# QSC/L-000019.3
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
PIN CONFIGURATION (NPN)
1 = BASE
2 = EM ITTER
3 = COLLECTOR
CSD1306
(SAW)
3
SOT-23
Formed SMD Package
1
2
Marking
CSD1306E=06
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Collector Current Peak
Power Dissipation @ T
a
=25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
T
j,
T
stg
VALUE
30
15
5
700
1
200
- 55 to +150
UNITS
V
V
V
mA
A
mW
ºC
Electrical Characterstics (T
a
=25ºC unless specified otherwise)
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Cut off Current
Emitter Cut off Current
Base Emitter On Voltage
Collector Emitter Saturation
Voltage
DC Current Gain
Transition Frequency
Output Capacitance
Input Capacitance
h
FE
Classification
CSD1306ERev_3 300103E
SYMBOL
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
BE (on)
V
CE (sat)
h
FE
f
T
C
ob
C
ib
CONDITIONS
I
C
=10µA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=1µA, I
C
=0
V
CB
=20V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=1V, I
C
=150mA
I
C
=500mA, I
B
=50mA
V
CE
=1V, I
C
=150mA
V
CE
=1V, I
C
=150mA,
V
CB
=10V, f=1MHz
V
EB
=0.5V, I
C
=0, f=1MHz
D : 250 - 500
E : 300 - 800
MIN
30
15
5
TYP
MAX
UNIT
V
V
V
µA
µA
V
V
1.0
1.0
1.0
0.5
250
250
10
100
F : 600 -1200
1200
MHz
pF
pF
Continental Device India Limited
Data Sheet
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