Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
CSD1489
TO-92
BCE
Low Frequency Power Amplifier.
Complementary CSB1058
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION
SYMBOL
VALUE
BVCBO
20
Collector -Base Voltage
BVCEO
16
Collector Emitter Voltage
BVEBO
6.0
Emitter Base Voltage
IC
2.0
Collector Current
PC
0.75
Collector Power Dissipation
Tj, Tstg
-55 to +150
Operating And Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
BVCBO
IC=10uA, IE=0
20
Collector -Base Voltage
BVCEO
IC=1mA, IB=0
16
Collector Emitter Voltage
BVEBO
IE=10uA, IC=0
6.0
Emitter Base Voltage
ICBO
VCB=16V, IE=0
-
Collector Cut off Current
IEBO
VEB=6V, IC=0
-
Emitter Cut off Current
hFE *
VCE=2V, IC=0.1A
100
DC Current Gain
VCE=2V, IC=2A
75
VCE(Sat) IC=1A, IB=0.1A
-
Collector Emitter Saturation Voltage
Dynamic Characteristics
ft
VCE=2V, IC=10mA,
-
Transition Frequency
Cob
VCB=10V, IE=0
-
Collector Output Capacitance
f=1MHz
hFE* Classification :
A 100-240;
B 200-400;
C 350-500
UNIT
V
V
V
A
W
deg C
TYP
-
-
-
-
-
-
-
-
80
20
MAX
-
-
-
2.0
0.2
500
-
0.3
-
-
UNIT
V
V
V
uA
uA
V
MHz
pF
Continental Device India Limited
Data Sheet
Page 1 of 3
CDIL [ Continental Device India Limited ]
