Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
IS/ISO 9002
Lic# QSC/L- 000019.2
NPN HIGH VOLTAGE SILICON POWER TRANSISTORS
CSD1426F
TO-3P Fully Isolated
Plastic Package
B
C
E
Colour TV Horizontal Output Applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
V
CBO
Collector Base Voltage
V
CEO
Collector Emitter Voltage
V
EBO
Emitter Base Voltage
I
C
Collector Current -Continuous
I
E
Emitter Current
P
C
Collector Power Dissipation @ Tc=25ºC
T
j
Junction Temperature
T
stg
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
I
CBO
V
CB
=500V, I
E
=0
Collector Cut off Current
V
EBO
I
E
=200mA, I
C
=0
Emitter Base Breakdown Voltage
h
FE
I
C
=0.5A, V
CE
=5V
DC Current Gain
V
CE(Sat)
I
C
=3A, I
B
=0.8A
Collector Emitter Saturation Voltage
V
BE(sat)
I
C
=3A, I
B
=0.8A
Base Emitter Saturation Voltage
-V
F
I
F
=3.5A
Forward Voltage ( Damper Diode)
DYNAMIC CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
f
T
V
CE
=10V, I
C
= 100mA
Transition Frequency
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
VALUE
1500
600
5.0
3.5
-3.5
34
150
-55 to +150
UNIT
V
V
V
A
A
W
ºC
ºC
MIN
5.0
8
TYP
MAX
10
UNIT
µA
V
V
V
V
8
1.5
2.0
MIN
TYP
3
95
MAX
UNIT
MHz
pF
SWITCHING CHARACTERISTICS
Fall Time
t
f
I
CP
=3A, I
B1
(end)= 0.8A
1.0
µs
Continental Device India Limited
Data Sheet
Page 1 of 3
CDIL [ Continental Device India Limited ]
