Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD
CTZ 2.6 to 47
500mW
DO- 35
Glass Axial Package
FEATURES
These Zeners Are Best Suited For Industrial Purpose , Military & Space applications.
Hermetically Sealed Glass With Double Stud And Glass Passivated Chip Provides Excellent Stabililty and
Reliability.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
VALUE
Power Dissipation @T
A
=25ºC
P
TA
500
P
S
Surge Power Dissipation
5
tp=8.3mS
T
J
Junction Temperature
175
T
stg
Storage Temperature
-65 to+175
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
R
th(j-a)
Thermal Resistance
Junction Ambient
Forward Voltage
at I
F
=200mA
UNIT
mW
W
ºC
ºC
VALUE UNIT
0.3 ºC/mW
V
F
1.5
V
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
r
ZK
@
I
ZK
I
ZT
I
R
@
V
ZT
@ r
ZT
@
DEVICE
Temp.
I
ZK
*
V
R
I
ZT
*
I
ZT
*
Coeff.of
MAX
MAX
Zener Voltage
typ
(V)
(Ω)
(mA)
(Ω)
(mA)
(%/ºC )
(µA)
CTZ2.6
2.6
30
20
600
1
-0.085
75
CTZ2.7
2.7
30
20
600
1
-0.085
75
CTZ3.0
3.0
48
20
600
1
-0.075
20
CTZ 3.3
3.3
44
20
600
1
-0.070
10
CTZ 3.6
3.6
42
20
600
1
-0.065
5
CTZ3.9
3.9
40
20
600
1
-0.060
5
CTZ 4.3
4.3
36
20
600
1
-0.055
0.5
CTZ 4.7
4.7
32
20
600
1
-0.043
10
CTZ 5.1
5.1
28
20
550
1
+/-0.030
5
CTZ 5.6
5.6
16
20
450
1
+/-0.028
10
CTZ 6.2
6.2
6
210
200
1
+0.045
10
CTZ 6.8
6.8
6
20
150
1
+0.050
5
CTZ2.6_47Rev081001
V
R
I
ZM
MAX
I
ZSM
MAX
(mA)
(V)
1
1
1
1
1
1
1
2
2
3
4
5
(mA)
147.8
168.3
148.5
135
126
115
105
95
87
80
72
65
1500
1375
1260
1165
1060
965
890
810
730
665
Continental Device India Limited
Data Sheet
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