Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLASTIC POWER TRANSISTOR
MJD13003
DPAK (TO-252)
Plastic Package
Designed for High Voltage, High Speed Power Switching Inductive Circuits Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
V
CEO
Collector Emitter Voltage
V
CEV
Collector Emitter Voltage
V
EBO
Emitter Base Voltage
I
C
Collector Current Continuous
*I
CM
Peak
I
B
Base Current Continuous
*I
BM
Peak
I
E
Emitter Current Continuous
*I
EM
Peak
Total Power Dissipation at T
a
=25ºC
**P
D
Derate Above 25ºC
Total Power Dissipation at T
c
=25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Junction to Case
P
D
T
j,
T
stg
VALUE
400
700
9.0
1.5
3.0
0.75
1.5
2.25
4.5
1.56
0.0125
15
0.12
- 65 to +150
UNIT
V
V
V
A
A
A
A
A
A
W
W/ºC
W
W/ºC
ºC
R
th (j-c)
8.33
80
260
ºC/W
ºC/W
ºC
**R
th (j-a)
Junction to Ambient in free air
Maximum Lead Temperature for
T
L
Soldering Purposes
*Pulse Test:- Pulse Width=5ms, Duty Cycle < 10%
** When Surface Mounted on Minimum Pad Sizes Recommended
ELECTRICAL CHARACTERISTICS (T
c
=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
V
CEO
I
C
=1mA, I
B
=0
Collector Emitter Voltage
Collector Cut Off Current
Emitter Cut Off Current
DC Current Gain
I
CEV
I
EBO
***h
FE
V
CEV
=Rated Value, V
BE (off)
=1.5V
V
CEV
=Rated Value, V
BE (off)
=1.5V, T
c
=100ºC
V
EB
=9V, I
C
=0
I
C
=0.5A, V
CE
=2V
I
C
=1A, V
CE
=2V
MIN
400
TYP MAX
0.1
2.0
1.0
40
25
UNIT
V
mA
mA
mA
8.0
5.0
***Pulse Test:- Pulse Width < 300µs, Duty Cycle < 2%
µ
MJD13003Rev160506E
Continental Device India Limited
Data Sheet
Page 1 of 5
CDIL [ Continental Device India Limited ]
