Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR EPITAXIAL TRANSISTORS
MZT2955 PNP
MZT3055 NPN
SOT-223
Formed SMD Package
With excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator
Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Base Current
Power Dissipation upto T
c
=25ºC
Derate above 25ºC
Power Dissipation upto T
a
=25ºC
Derate above 25ºC
Junction Temperature
Storage Temperature
THERMAL RESISTANCE
Junction to Case
Junction to Ambient in free air
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
I
B
P
D
P
D
T
j
T
stg
VALUE
60
70
5.0
10
6.0
8.0
64
2.0
16
150
- 55 to +150
UNIT
V
V
V
A
A
W
mW/ºC
W
mW/ºC
ºC
ºC
R
th (j-c)
R
th (j-a)
15.6
62.5
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (T
a
=25ºC unless specified otherwise )
DESCRIPTION
Collector Emitter Voltage
Collector Cut Off Current
Collector Cut Off Current
Collector Cut Off Current
Emitter Cut Off Current
DC Current Gain
Collector Emitter Saturation Voltage
SYMBOL
V
CEO
I
CEX
I
CBO
I
CEO
I
EBO
*h
FE
*V
CE (sat)
TEST CONDITION
I
C
=1mA, I
B
=0
V
CE
=70V, V
EB (off)
=1.5V
V
CE
=70V, V
EB (off)
=1.5V, T
C
=150ºC
V
CB
=70V, I
E
=0
V
CB
=70V, I
E
=0, T
C
=150ºC
V
CE
=30V, I
B
=0
V
EB
=5V, I
C
=0
I
C
=4A, V
CE
=4V
I
C
=10A, V
CE
=4V
I
C
=4A, I
B
=400mA
I
C
=10A, I
B
=3.3A
I
C
=4A, V
CE
=4V
I
C
=0.5A, V
CE
=10V, f=500KHz
20
5
MIN
60
MAX
1.0
5.0
1.0
10
0.7
5.0
100
1.1
8.0
1.8
2
V
V
V
MHz
UNIT
V
mA
mA
mA
mA
mA
mA
*V
BE(on)
Base Emitter On Voltage
f
T
Transition Frequency
*Pulse Test : Pulse width < 300µs, Duty Cycle < 2%
µ
MZT2955_MZT3055Rev061104E
Continental Device India Limited
Data Sheet
Page 1 of 4
CDIL [ Continental Device India Limited ]
