Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
P2N2907
P2N2907A
TO-92
Plastic Package
C
BE
Designed for switching and linear applications, DC amplifier and driver for industrial applications
ABSOLUTE MAXIMUM RATINGS (T
a
=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL
P2N2907
V
CEO
40
Collector Emitter Voltage
V
CBO
60
Collector Base Voltage
Emitter Base Voltage
Collector Current
Total Power Dissipation @ T
a
=25ºC
Derate above 25ºC
Total Power Dissipation @ T
C
=25ºC
Derate above 25ºC
Operating and Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Case
Junction to Ambient
V
EBO
I
CM
P
D
P
D
T
j
, T
stg
5
600
625
5
1.5
12
- 55 to +150
P2N2907A
60
60
UNIT
V
V
V
mA
mW
mW/ºC
W
mW/ºC
ºC
R
th (j-c)
R
th (j-a)
83.3
200
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (T
a
=25ºC Unless Specified Otherwise)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
SYMBOL
*V
CEO
V
CBO
V
EBO
I
CBO
Collector Cut off Current
I
CEX
I
CEO
I
EBO
I
BEX
*V
CE (sat)
*V
BE (sat)
TEST CONDITION
I
C
=10mA, I
B
=0
I
C
=10µA, I
E
=0
I
E
=10µA, I
C
=0
V
CB
=50V, I
E
=0
V
CB
=50V, I
E
=0, T
a
=150 C
V
CE
=30V, V
EB(off)
=0.5V
V
CE
=10V, I
B
=0
V
EB
=3V, I
C
=0
V
CE
=30V, V
EB(off)
=0.5V
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
Base Emitter Saturation Voltage
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
o
P2N2907
>40
>60
>5
<20
<20
<50
<10
<10
<50
<0.4
<1.6
<1.3
<2.6
P2N2907A
>60
>60
>5
<10
<10
<50
<10
<10
<50
<0.4
<1.6
<1.3
<2.6
UNIT
V
V
V
nA
µA
nA
nA
nA
nA
V
V
Emitter Cut off Current
Base Cut off Current
Collector Emitter Saturation Voltage
P2N2907_A Rev_1151204D
Continental Device India Limited
Data Sheet
Page 1 of 5
CDIL [ Continental Device India Limited ]
