NEC's SUPER LOW
NOISE HJ FET
FEATURES
OUTLINE DIMENSION
2.0 ± 0.2
NE3210S01
(Units in mm)
• SUPER LOW NOISE FIGURE:
0.35 dB TYP at f = 12 GHz
• HIGH ASSOCIATED GAIN:
13.5 dB TYP at f = 12 GHz
PACKAGE OUTLINE SO1
• GATE LENGTH:
L
G
≤ 0.20
μm
• GATE WIDTH:
W
G
= 160
μm
1
2.
0
±
2
0.
2
DESCRIPTION
NEC's NE3210S01 is a pseudomorphic Hetero-Junction FET
that uses the junction between Si-doped AIGaAs and undoped
InGaAs to create very high mobility electrons. The device
features mushroom shaped TiAl gates for decreased gate
resistance and improved power handling. Its excellent low
noise figure and high associated gain make it suitable for DBS
and commercial systems. The NE 3210S01 is housed in a low
cost plastic package which is available in tape and reel.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
0.125 ± 0.05
K
3
0.65 TYP
4
0.5
TYP
2.0±0.2
1. Source
2. Drain
3. Source
4. Gate
1.9 ± 0.2
1.6
1.5 MAX
0.4 MAX
4.0 ± 0.2
ELECTRICAL CHARACTERISTICS
SYMBOLS
G
A
NF
g
m
I
DSS
V
P
I
GSO
(T
A
= 25°C)
PARAMETERS AND CONDITIONS
Associated Gain
1
, V
DS
= 2 V, I
D
= 10 mA, f = 12 GHz
Noise Figure
1
, V
DS
= 2 V, I
D
= 10 mA, f = 12 GHz
Transconductance, V
DS
= 2 V, I
D
= 10 mA
Saturated Drain Current, V
DS
= 2 V, V
GS
= 0 V
Gate to Source Cutoff Voltage, V
DS
= 2 V, I
D
= 100
μA
Gate to Source Leakage Current, V
GS
= -3 V
PART NUMBER
PACKAGE OUTLINE
UNITS
dB
dB
mS
mA
V
uA
MIN
12
40
15
-0.2
NE3210S01
S01
TYP
13.5
0.35
55
40
-0.7
0.5
MAX
0.45
70
-2.0
10
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production
line
as a "go-no-go" screening tuned for the "generic" type but not each specimen.
California Eastern Laboratories
CEL [ CALIFORNIA EASTERN LABS ]
