HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE350184C
K-BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
• Super low noise figure and high associated gain
NF = 0.7 dB TYP., G
a
= 13.5 dB TYP. @ f = 20 GHz
• Micro-X ceramic (84C) package
APPLICATIONS
• 20 GHz-band DBS LNB
• Other K-band communication systems
ORDERING INFORMATION
Part Number
NE350184C-T1
NE350184C-T1A
Order Number
NE350184C-T1-A
NE350184C-T1A-A
Package
84C (Pb-Free)
Quantity
1 kpcs/reel
5 kpcs/reel
Marking
A
Supplying Form
• 12 mm wide embossed taping
• Pin 4 (Gate) faces the perforation side
of the tape
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE350184C
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
G
P
tot
Note
Ratings
4
−3
I
DSS
80
165
+150
−65
to +150
Unit
V
V
mA
µ
A
mW
°C
°C
T
ch
T
stg
Note
Mounted on 1.08 cm
2
×
1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PG10584EJ01V0DS (1st edition)
Date Published November 2005 CP(K)