NE350184C 参数 Datasheet PDF下载

HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE350184C

K-BAND SUPER LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

FEATURES

• Super low noise figure and high associated gain

NF = 0.7 dB TYP., G

a

= 13.5 dB TYP. @ f = 20 GHz

• Micro-X ceramic (84C) package

APPLICATIONS

• 20 GHz-band DBS LNB

• Other K-band communication systems

ORDERING INFORMATION

Part Number

NE350184C-T1

NE350184C-T1A

Order Number

NE350184C-T1-A

NE350184C-T1A-A

Package

84C (Pb-Free)

Quantity

1 kpcs/reel

5 kpcs/reel

Marking

A

Supplying Form

• 12 mm wide embossed taping

• Pin 4 (Gate) faces the perforation side

of the tape

Remark

To order evaluation samples, contact your nearby sales office.

Part number for sample order: NE350184C

ABSOLUTE MAXIMUM RATINGS (T

A

= +25°C)

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Gate Current

Total Power Dissipation

Channel Temperature

Storage Temperature

Symbol

V

DS

V

GS

I

D

I

G

P

tot

Note

Ratings

4

−3

I

DSS

80

165

+150

−65

to +150

Unit

V

V

mA

µ

A

mW

°C

°C

T

ch

T

stg

Note

Mounted on 1.08 cm

2

×

1.0 mm (t) glass epoxy PCB

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

Document No. PG10584EJ01V0DS (1st edition)

Date Published November 2005 CP(K)