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NE3503M04 参数 Datasheet PDF下载

NE3503M04图片预览
型号: NE3503M04
PDF下载: 下载PDF文件 查看货源
内容描述: NEC的C TO Ku波段超低噪声,高增益放大器的N- CHANNER HJ -FET [NECs C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET]
分类和应用: 晶体放大器晶体管光电二极管
文件页数/大小: 7 页 / 397 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NEC's C TO Ku BAND
SUPER LOW NOISE AND NE3503M04
HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET
FEATURES
• SUPER LOW NOISE FIGURE AND
HIGH ASSOCIATED GAIN:
NF = 0.55 dB TYP., G
a
= 11.5 dB TYP. @ V
DS
= 2 V,
I
D
= 10 mA, f = 12 GHz
• FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD
(M04) PACKAGE:
• GATE WIDTH:
W
g
= 160
μm
M04 PACKAGE
APPLICATIONS
• DBS LNB gain-stage, Mix-stage
• Low noise amplifier for microwave communication
system
ORDERING INFORMATION
PART NUMBER
NE3503M04-A
NE3503M04-T2-A
QUANTITY
50 pcs (Non reel)
3 kpcs/reel
PACKAGE
4-Pin thin-type
super minimold
(Pb-Free)
MARKING
V75
SUPPLYING FORM
8 mm wide embossed taping
Pin 1 (Source), Pin 2 (Drain) face the perforation side
of the tape
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3503M04-A
ABSOLUTE MAXIMUM RATINGS
(T
A
= +25°C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
SYMBOL
V
DS
V
GS
I
D
I
G
P
tot
T
ch
T
stg
RATINGS
4.0
−3.0
I
DSS
80
125
+125
−65
to +125
UNIT
V
V
mA
μA
mW
°C
°C
Caution
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
California Eastern Laboratories