PRELIMINARY PRODUCT INFORMATION
HETERO JUNCTION FIELD EFFECT TRANSISITOR
NE3508M04
L to S BAND LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
- Super Low Noise Figure & Associated Gain :
NF=0.45dB TYP. Ga=14dB TYP. @f=2GHz, VDS=2V, ID=10mA
- Flat-lead 4-pin tin-type super mini-mold(M04) package (Pb-Free T. )
APPLICATIONS
-
Satellite Radio(SDARS, DMB, etc.) antenna LNA
-
LNA for Micro-wave communication system
ORDERING INFORMATION
Part Number
NE3508M04
NE3508M04-T2
Order Number
NE3508M04-A
NE3508M04-T2-A
Quantity
50pcs (Non reel)
3 Kpcs/reel
V79
Marking
Supplying Form
- 8 mm wide emboss taping
- Pin1(Source), Pin2(Drain)
face the perforation side of the tape
Remark
To order evaluation samples, please contact your local NEC sales office.
Part number for sample order: NE3508M04
ABSOLUTE MAXIMUM RATINGS ( T
A
=+ 25
°C
)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
SYMBOL
V
DS
V
GS
I
D
IG
P
tot
T
ch
T
stg
Note
RATINGS
4.0
-3.0
I
DSS
400
175
+150
- 65 to +150
UNIT
V
V
mA
µA
mW
°C
°C
Note
Mounted on 1.08cm
2
X 1.0mm(t) glass epoxy PCB
Caution : Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
Document No. P*****EJ0V0PM00 (10th edition)
Date Published
October
2005
CP(K)
©
NEC Compound Semiconductor Devices 2005
CEL [ CALIFORNIA EASTERN LABS ]
