HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3509M04
L TO S BAND LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
• Super low noise figure and high associated gain
NF = 0.4 dB TYP., G
a
= 17.5 dB TYP. @ f = 2 GHz, V
DS
= 2 V, I
D
= 10 mA
• Flat-lead 4-pin thin-type super minimold (M04) package
APPLICATIONS
• Satellite radio (SDARS, DMB, etc.) antenna LNA
• GPS antenna LNA
• Low noise amplifier for microwave communication system
ORDERING INFORMATION
Part Number
NE3509M04
NE3509M04-T2
Order Number
NE3509M04-A
NE3509M04-T2-A
Package
Flat-lead 4-pin thin-
type super minimold
(M04) (Pb-Free)
Quantity
50 pcs (Non reel)
3 kpcs/reel
Marking
V80
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Source), Pin 2 (Drain) face
the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3509M04
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
G
P
tot
Note
Ratings
4.0
−3.0
I
DSS
200
150
+150
−65
to +150
Unit
V
V
mA
µ
A
mW
°C
°C
T
ch
T
stg
Note
Mounted on 1.08 cm
2
×
1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PG10608EJ01V0DS (1st edition)
Date Published April 2006 NS CP(K)
CEL [ CALIFORNIA EASTERN LABS ]
