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NE3512S02-T1D-A 参数 Datasheet PDF下载

NE3512S02-T1D-A图片预览
型号: NE3512S02-T1D-A
PDF下载: 下载PDF文件 查看货源
内容描述: 异质结型场效应晶体管 [HETERO JUNCTION FIELD EFFECT TRANSISTOR]
分类和应用: 晶体小信号场效应晶体管射频小信号场效应晶体管放大器
文件页数/大小: 8 页 / 266 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3512S02
C TO Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
• Super low noise figure and high associated gain
NF = 0.35 dB TYP., G
a
= 13.5 dB TYP. @ f = 12 GHz
• Micro-X plastic (S02) package
APPLICATIONS
• C to Ku-band DBS LNB
• Other C to Ku-band communication systems
ORDERING INFORMATION
Part Number
NE3512S02-T1C
NE3512S02-T1D
Order Number
NE3512S02-T1C-A
NE3512S02-T1D-A
Package
S02 (Pb-Free)
Quantity
2 kpcs/reel
10 kpcs/reel
Marking
C
Supplying Form
• 8 mm wide embossed taping
• Pin 4 (Gate) faces the perforation side
of the tape
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3512S02
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
G
P
tot
Note
Ratings
4
−3
I
DSS
100
165
+125
−65
to +125
Unit
V
V
mA
µ
A
mW
°C
°C
T
ch
T
stg
Note
Mounted on 1.08 cm
2
×
1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PG10592EJ01V0DS (1st edition)
Date Published February 2006 CP(N)