NE3514S02-T1C-A 参数 Datasheet PDF下载

HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE3514S02

K BAND SUPER LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

FEATURES

• Super low noise figure and high associated gain

NF = 0.75 dB TYP., G

a

= 10 dB TYP. @ f = 20 GHz

• Micro-X plastic (S02) package

APPLICATIONS

• 20 GHz-band DBS LNB

• Other K-band communication systems

ORDERING INFORMATION

Part Number

NE3514S02-T1C

NE3514S02-T1D

Order Number

NE3514S02-T1C-A

NE3514S02-T1D-A

Package

S02 (Pb-Free)

Quantity

2 kpcs/reel

10 kpcs/reel

Marking

D

Supplying Form

• 8 mm wide embossed taping

• Pin 4 (Gate) faces the perforation side

of the tape

Remark

To order evaluation samples, contact your nearby sales office.

Part number for sample order: NE3514S02

ABSOLUTE MAXIMUM RATINGS (T

A

= +25°C)

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Gate Current

Total Power Dissipation

Channel Temperature

Storage Temperature

Symbol

V

DS

V

GS

I

D

I

G

P

tot

Note

Ratings

4

−3

I

DSS

100

165

+125

−65

to +125

Unit

V

V

mA

µ

A

mW

°C

°C

T

ch

T

stg

Note

Mounted on 1.08 cm

2

×

1.0 mm (t) glass epoxy PCB

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

Document No. PG10593EJ01V0DS (1st edition)

Date Published February 2006 CP(N)